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2010-05-17 bfp460 1 1 2 3 4 npn silicon rf transistor ? general purpose low noise amplifier for low voltage, low current applications ? high esd robustness, typical 1500v (hbm) ? low minimum noise figure 1.1 db at 1.8 ghz ? high linearity: output compression point op1db = 13 dbm @ 3v, 35ma, 1.8ghz ? easy to use standard package with visible leads ? pb-free (rohs compliant) package ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp460 abs 1 = e 2 = c 3 = e 4=b - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4.5 4.2 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 70 ma base current i b 7 total power dissipation 1) t s 92c p tot 230 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 t s is measured on the collector lead at the soldering point to the pcb
2010-05-17 bfp460 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 250 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5.8 - v collector-emitter cutoff current v ce = 15 v, v be = 0 v ce = 2 v, v be = 0 v ce = 5 v, v be = 0 , t a = 85c verified by random sampling i ces - - - - 1 2 1000 30 40 na collector-base cutoff current v cb = 2 v, i e = 0 v cb = 5 v, i e = 0 i cbo - - 1 - 30 30 emitter-base cutoff current v eb = 0,5 v, i c = 0 i ebo - 1 500 dc current gain v ce = 3 v, i c = 20 ma , pulse measured h fe 90 120 160 - 1 for calculation of r thja please refer to application note an077 thermal resistance 2010-05-17 bfp460 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t 16 22 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.32 0.45 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.28 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.55 - minimum noise figure v ce = 2v, i c = 3 ma , z s = z sopt, f = 100 mhz v ce = 3v, i c = 5 ma , z s = z sopt, f = 1.8 ghz v ce = 3v, i c = 5 ma , z s = z sopt, f = 3 ghz nf min - - - 0.7 1.1 1.2 - - - db 2010-05-17 bfp460 4 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) maximum power gain 1) i c = 3 ma, v ce = 1.5 v, z s = z sopt, z l = z lopt , f = 100 mhz i c = 20 ma, v ce = 3 v, z s = z sopt, z l = z lopt , f = 1,8 ghz f = 3 ghz g max - - - 26.5 17.5 12.5 - - - db transducer gain i c = 3 ma, v ce = 1.5 v, z s = z l = 50 ? , f = 100 mhz i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 3 ghz | s 21e | 2 - - - 20 15 10.5 - - - db third order intercept point at output 2) v ce = 3 v, i c = 20 ma, f = 100 mhz v ce = 3 v, i c = 20 ma, f = 1.8 ghz ip 3 - - 23.5 27.5 - - dbm 1db compression point at output v ce = 3v, i c = 20ma , z s = z l = 50 ? , f = 100 mhz v ce = 3v, i c = 20ma, z s = z l = 50 ? , f = 1.8 ghz v ce = 3v, i c = 35ma, z s = z l = 50 ? , f = 1.8 ghz p -1db - - - 9.5 11.5 13 - - - 1 g ma = | s 21 / s 12 | (k-(k2-1) 1/2 ), g ms = ? s 21 / s 12 ? 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz 2010-05-17 bfp460 5 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 a 150 0 20 40 60 80 100 120 140 160 180 200 220 v 260 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 2 4 6 8 10 v 14 v cb 0 0.1 0.2 0.3 0.4 0.5 pf 0.7 c cb third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1800mhz 0 10 20 30 40 ma 55 i c 5 7 9 11 13 15 17 19 21 23 25 27 29 dbm 33 i p3 1v 2v 3v 4v transition frequency f t = ? ( i c ) f = 1 ghz v ce = parameter 0 10 20 30 40 ma 60 i c 4 6 8 10 12 14 16 18 20 ghz 24 f t 3-4v 2v 1v 2010-05-17 bfp460 6 power gain g ma , g ms , | s 21 | 2 = ? ( f ) v ce = 3 v, i c = 20 ma 0 1 2 3 4 ghz 6 f 0 5 10 15 20 25 30 35 40 db 50 g gms gma |s21|2 power gain g ma , g ms = ? ( i c ) v ce = 3v f = parameter in ghz 0 10 20 30 40 ma 60 i c 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ? ( v ce ) i c = 20 ma f = parameter in ghz 0.5 1 1.5 2 2.5 3 3.5 v 4.5 v ce 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6 noise figure f = ? ( i c ) v ce = 2 v, f = parameter z s = z sopt 2010-05-17 bfp460 7 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 100mhz 0 10 20 30 40 50 60 ma 80 ic 0 4 8 12 16 20 24 dbm 32 ip3 1.5v 2v 2.5v 3v 4v noise figure f = ? ( f ) v ce = 2v, z s = z sopt , i c = parameter source impedance for min. noise figure vs. frequency v ce = 2v, i c = parameter 2010-05-17 bfp460 8 spice parameter for the spice model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the bfp460 spice model in the internet in mwo- and ads- format which you can import into these circuit simulation tools very quickly and conveniently. the simulation data have been generated and verified using typical devices. the bfp460 spice model reflects the typical dc- and rf-performance with high accuracy. 2010-05-17 bfp460 9 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer 2010-05-17 bfp460 10 datasheet revision history: 17 may 2010 this datasheet replaces the revision from 14 august 2008. the product itself has not been changed and the device characteristics remain unchanged. only the product description and information available in the datasheet has been expanded and updated. previous revision: 14 august 2008 page subject (changes since last revision) 1 maximum ratings for collector current icmax, base current ibmax and total power dissipation ptot increased 2 typical values for leakage currents included, maximum leakage current values reduced 3 noise description at 100 mhz added 4 gain and linearity description at 100 mhz added 5 - 7 curves for ip3 and noise at 100 mhz added 2010-05-17 bfp460 11 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( |
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